濺射離子槍，等離子體發(fā)生源

濺射離子槍，等離子體發(fā)生源

IonEtch Sputter Gun
濺射離子槍主要用途:

• 濺射清洗/表面科學(xué)中樣品表面處理, MBE and HV 濺射過(guò)程

• 離子輔助沉積

• 離子束濺射鍍膜

• 反應(yīng)離子刻蝕
  技術(shù)指標(biāo):

  離子能量	25eV - 5keV
  總的離子束電流	1mA (at 5kV with Argon) High Current Version: up to 4mA (at 5kV with Argon)
  電流密度	120μA/cm2 at 100mm working distance
  離子束發(fā)散角	Ion energy dependant (typically 15°)
  工作距離	100 mm (typically)
  等離子體杯	of secondary electrons)
  氣體進(jìn)氣口徑	CF-16 (1.33“OD)
  氣體流速	1 - 5 sccm (1,5 sccm typical, gas dependant)
  工作真空度	10-6mbar - 10-3mbar (1x10-5mbar typical in chamber with 300l/s pimp). Low 10-6 mbar range possible - beam current then 140μA max.
  激發(fā)模式	微波放電等離子體 (無(wú)燈絲)
  安裝口徑	CF-35 (2.75“OD)
  槍直徑	34mm (真空端)
  泄露閥	需要?dú)怏w質(zhì)量流量計(jì)

第二代等離子體源，可以提供離子源，原子源，離子/原子混合源

原子源主要用途：
制備氮化物， e.g. GaN, AlN, GaAsN, SiN etc.
氫原子清洗，氫原子輔助MBE.
制備氧化物， e.g. ZnO, Superconductors, Optical coatings, Dielectrics. 
摻雜， e.g. ZnSe
離子源用途:
離子束輔助沉積(IBAD) for both UHV and HV processes
濺射沉積，雙離子束濺射，Sputter deposition and dual ion beam sputtering
濺射清洗/表面科學(xué)中的樣品表面處理，Sputter cleaning / surface preparation in surface science, MBE and HV sputter processes.
原位刻蝕， e.g. Chlorine
技術(shù)參數(shù)：
Vacuum compatibility: Fully UHV compatible
Bakeable: >200°C
Microwave power: 250W max at 2.45GHz
Magnet type: Permanent rare-earth. Removeable for bakeout without breaking vacuum
Mounting: NW63CF (4.5"OD)
In vacuum length: 300mm (custom lengths possible): In vacuum diameter max = 57mm
Beam diameter: ~25mm at source (narrower beams also easily produced)
Plasma cup: Alumina
Aperture: Alumina or Boron Nitride
Gas flow rate: 0.01-100sccm depending on aperture selected
Working pressure: ~10-7 Torr to 5x10-3 Torr depending on aperture, pump and application - please contact tectra to discuss your application. Differential pumping option available
Working Distance: 50mm-300mm. 150mm typical
Cooling: Fully water-cooled (including magnetron)
Power supplies:
Microwave
Grid supply*
* Ion and Hybrid Source only
19” rack mount. 3U height. 230VAC, 50Hz or 115VAC, 60Hz
19” rack mount. 3U height. 230VAC, 50Hz or 115VAC, 60Hz
主要特點(diǎn)：
Key Features of the Plasma Source:
Filamentless
Suitable for use with most gases including reactive gases such as oxygen, chlorine, hydrogen, nitrogen etc.
No microwave tuning
Factory set. Simply turn the plasma on and off.
User configurable
The extraction optics are designed to be quickly and easily exchanged allowing users to customise their source to suit a particular combination of sample size, working pressure and current density. Easily exchanged apertures enable beam diameter, gas load and atom flux to be optimised.
simple bakeout preparation
new bakeable ECR magnets allow simple bekeout preparation by just undoing 4 screws. The magnets do not need to be removed but are still on the air side on a closed cooling loop. Hence no sintered material is exposed vacuum.
Al2O3 plasma region
Alumina plasma cup as standard with higher yield of secondary electrons, better resistance against aggressive gases such as Oxygen and ideal plasma striking capability
compact
the air side envilope sizes are brought to a minimum of just 258mm from flange (knife edge side) to case end